The misfit layer compounds {(SnSe)1.16}m(NbSe2)n have a crystal structure consisting of monochalcogenide layers of SnSe and dichalcogenide layers of NbSe2 stacked by van der Waals forces. These materials exhibit a unique stacking structure with partial breaking of the spatial inversion symmetry, resulting in distinctive physical properties. One such property, observed in single crystals with m = 1 and n = 2, is that the in-plane upper critical field (Hc2) reaches almost twice the Pauli limit (HP), suggesting the presence of an unconventional superconducting state under strong magnetic fields [1]. On the other hand, the superconducting transition temperature (Tc) is about 5 K, which is lower than that of 7 K in pure NbSe2. The Tc may decrease by electron-carrier doping because the Tc of NbSe2 decreases with this doping [2]. Therefore, it is expected that hole doping could increase the Tc in {(SnSe)1.16}1(NbSe2)2, as has been reported in another misfit layer compound [3]. In this study, we have synthesized In-doped {(SnSe)1.16}m(NbSe2)n single crystals in which the Sn site of the charge-supplying SnSe layer was partially substituted with In and investigated their superconducting properties. The single crystals were prepared by the molten salt flux method. X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) confirmed the doped In ions in the grown single crystals. Furthermore, we observed the change in the superconducting properties of these single crystals compared to the parent compound {(SnSe)1.16}1(NbSe2)2. In this talk, we will report on the effect of In-doping on superconducting properties.